Al_xGa_(1-x)As/GaAs多层异质材料中Al_xGa(1-x)As层氧化特性的实验研究  

Oxidation Characteristics of Al_xGa_(1-x)As Layer Sandwiched Between Al_xGa_(1-x)As/GaAs Multiple-layer Heterostructures

作　　者：康学军[1] 林世鸣[1] 高俊华[1] 廖奇为[1] 朱家廉[1] 王红杰[1] 张春晖 王启明[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点联合实验室,北京100083

出　　处：《Journal of Semiconductors》1997年第10期791-795,共5页半导体学报（英文版）

摘　　要：本文报道了AlxGa1-xAs／GaAs多层异质外延材料中高Al组份的AlxGa1-xAs层在400～500℃与水汽（携带气体为N2）发生化学反应的氧化特性．其氧化反应是沿着AlxGa1-xAs层从其刻蚀出的台面边界开始横向进行的．AlxGa1-xAs层的氧化速度与AlxGa1-xAs中x值、层厚、水汽通量、氧化温度等4个因素有关；根据不同温度下AlAS层氧化反应速度常数，计算出了一定厚度AlAs层与水汽发生化学反应的活化能．We report the oxidation characteristics of high Al composition AlxGa1-xAs layer contained in the AlxGa1-xAs/GaAs multiple-layer heterostructures, by reaction with H2O vapor(N2 carrier gas) at temperature 400~500℃. The oxidation proceeds laterally in the AlxGa1-xAs layer from the chemically etched mesa edge. The oxidation rate of AlxGa1-xAs layer is related to the Al composition, the thickness of AlxGa1-xAs layer, the reaction temperature, and the carrier gas flow. According to the reaction rate at different temperatures, we calculate the activation energy of AlAs reacting with H2O vapor.

关 键 词：多层异质材料 Ⅱ-Ⅴ族 化含物半导体 

分 类 号：TN304.23[电子电信—物理电子学]