基于体硅工艺的定位平台制作工艺分析  

Fabrication process analysis for nano-positioning stage based on silicon bulk micromachining

作　　者：王家畴[1] 荣伟彬[1] 李昕欣[2] 孙立宁[1] 

机构地区：[1]哈尔滨工业大学机器人研究所,黑龙江哈尔滨150001 [2]中国科学院上海微系统与信息技术研究所传感技术国家重点联合实验室,上海200050

出　　处：《光学精密工程》2008年第4期636-641,共6页Optics and Precision Engineering

基　　金：国家杰出青年基金资助项目(No.50725518);国家“863”高技术研究发展计划资助项目(No.2007AA04Z315);长江学者和创新团队发展计划资助项目

摘　　要：针对纳米定位平台的构型和定位精度问题,采用体硅加工技术成功地研制了一种基于单晶硅并带有位移检测功能的新型二自由度纳米级定位平台。介绍了定位平台的相关制作工艺,并对关键工艺进行了分析,总结了导致器件失效的主要原因,探讨了减少失效的方法。同时,提出了一种可行的面内侧面压阻加工方法。通过对深度反应离子刻蚀(DRIE)工艺参数的调整,成功地刻蚀出大尺寸、大深宽比的结构释放窗口,释放了最小线宽为2.5μm,厚度为50μm的梳齿结构。In order to realize the miniaturized nano-positioning stage, a novel 2-DOF Single Crystal Silicon （SCS） nano-positioning micro x-y stage with the function of displacement detection was successfully developed using silicon bulk machining. The fabrication process of the nano-positioning stage with high aspect ratio and big dimension was presented. The effects of Deep Reactive Ion Etching （DRIE） and the backside protecting under the etching silicon on the structure were analyzed. Some factors causing nano-position stage failure were identified, and several advices were provided for avoiding these failures. Moreover, an effective fabricating technique was proposed to fabricate a vertical sidewall piezoresistor in plane in this nano-positioning stage. By adjusting DRIE parameters, a backside window with high aspect ratio and big dimension for releasing the structure was etched and elec- trostatics comb structure of 2.5/μm wide and 50μm thickness was successfully released. Experimental results show the nano-positioning stata with high aspect ratio has excellent performance in integrating displacement detection.

关 键 词：体硅工艺 深度反应离子刻蚀 背片技术 面内侧面压阻 纳米级定位平台 

分 类 号：TN305[电子电信—物理电子学]