低温多晶硅薄膜的制备评述  

Preparation Progress on Low Temperature Polysilicon Films

作　　者：杨定宇[1] 蒋孟衡[1] 杨军[1] 

机构地区：[1]成都信息工程学院光电技术系,四川成都610225

出　　处：《材料科学与工程学报》2008年第2期298-301,共4页Journal of Materials Science and Engineering

基　　金：四川省应用基础研究基金资助项目(04JY029-104)

摘　　要：低温多晶硅薄膜晶体管(LTPS-TFT)驱动技术是实现大尺寸全彩平板显示的必由之路。然而,传统的低温多晶硅薄膜制作工艺存在着工序复杂、薄膜均匀性差、可能有金属污染且造价昂贵等问题。因此,有必要研发新一代的低温多晶硅薄膜制备工艺以期进一步提高薄膜质量,降低驱动成本。本文首先介绍了金属诱导横向晶化法(MILC)和准分子激光晶化法(ELA)制备低温多晶硅薄膜的原理,分析了两者各自的优缺点。接着,重点阐述了电感耦合等离子体化学气相沉积法(ICP-CVD)的工作原理和特点,并介绍了目前ICP-CVD在低温多晶硅薄膜制备上所取得的进展。Presently, the driving technology based on the thin film transistor （TFT） of low temperature polycrystalline silicon （LTPS） has been proven to be the only way to achieve excellent performances in the large area flat-panel displayers. However, there are still some problems in the traditional preparation process of LTPS, for example, the complex fabricate process, the inferior film uniformity, the probably metal contamination and high cost of devices. So, it is necessary to search for new preparation methods to improve the film qualities and reduce the driving cost. Firstly, we introduced the process principle of the two traditional methods which are metal induced lateral crystallization （MILC） and excimer laser annealing （El.A）, their advantages and shortcomings were also analyzed. Then, the principle and characteristics of inductively coupled plasma chemical vapor deposition （ICP-CVD） were detailedly expounded, the progress in the preparation of LTPS by ICP- CVD was also presented.

关 键 词：低温多晶硅薄膜 金属诱导横向晶化 准分子激光晶化 电感耦合等离子体化学气相沉积 

分 类 号：TN304.05[电子电信—物理电子学]