基于激光诱导荧光技术的化学机械抛光机理的应用研究  

Research on Chemical Mechanical Polishing Mechanism Based on Laser Induced Fluorescence Technology

作　　者：楼飞燕[1] 赵萍[1] 郑晓锋[1] 袁巨龙[1] 周兆忠[1] 

机构地区：[1]浙江工业大学机电学院,浙江杭州310014

出　　处：《新技术新工艺》2008年第4期53-57,共5页New Technology & New Process

基　　金：国家自然科学基金(50475119);浙江省自然科学基金(Y104241;Y104494;Y106590)

摘　　要：虽然化学机械抛光(CMP)技术在半导体产业中得到越来越广泛的应用,但人们对化学机械抛光加工的理解还多半停留在经验阶段,为深入研究其加工机理,引入了激光诱导荧光(LIF)检测技术,在化学机械抛光(CMP)过程中使用LIF技术对晶片下抛光液的流动、混合、抛光液膜的厚度、温度、pH值进行可视化研究,从而来揭示CMP的加工机理。With the rapid growth of Integrate Circuit (IC), Chemical Mechanical Polishing (CMP) is widely used in semiconductor industry as global planarization method, but, people mostly depends on experience during Chemical Mechanical Polishing, and little know deeply and really about CMP mechanism. In this paper, a technology of Laser Induced Fluorescence (LIF) is used for studying the mechanism of Chemical Mechanical Polishing. With the LIF technology, we can visualize the slurry flow between the wafer and the pad. During CMP, the slurry flow, slurry mixing, the thin film thickness, temperature and pH of slurry can be known with the LIF technology and the mechanism is exposed.

关 键 词：化学机械抛光(CMP) 激光诱导荧光(LIF) 荧光强度 

分 类 号：TG661[金属学及工艺—金属切削加工及机床] TN305.2[电子电信—物理电子学]