不同下电极对Sol-Gel LiTaO_3薄膜性能的影响  

Effect of Different Electrodes on the Ferroelectric Properties of Sol-Gel LiTaO_3 Films

作　　者：但迪迪[1] 张德银[1] 李坤[1] 谢太斌[1] 李金华[1] 

机构地区：[1]江苏工业学院功能材料实验室,江苏常州213164

出　　处：《江苏工业学院学报》2008年第1期5-8,共4页Journal of Jiangsu Polytechnic University

基　　金：国家自然科学基金项目资助(60572007)

摘　　要：用醇盐制备了钽酸锂(LiTaO3)溶胶,分别在Pt、ITO、TiN衬底上旋转涂胶成膜。经快速热退火后,用X射线衍射(XRD)测试了膜的结晶取向,用PLC-100铁电材料分析仪测试膜的铁电特性,用TH2818测试薄膜的介电常数及损耗。结果表明,3种衬底上制备出的薄膜在650℃均可达到充分结晶,薄膜的相对介电常数约160;在10 V时,Pt、ITO、TiN下电极上的剩余极化强度分别为8.42,5.21和5.76μC/cm2;在5 V时的漏电分别为2.71×10-7,9.24×10-7和2.19×10-7A/cm2;介电损耗分别为0.02,0.18和0.31。讨论了衬底对薄膜性能影响的原因。LiTaO3 ferroelectrtic thin films were prepared by spin coating Sol--Gel LiTaO3 on the ITO, Pt and TiN substrates. The properties of LiTaO3 films after Rapid Thermal Annealing （RTA） were tested by X--ray Diffraction （XRD） for orientation of crystallization, by Radiant technology PLC--100 for ferroelectric hysteresis loops, the remnant polarization, by TH2818 for dielectric constant and loss. The resuits show that Sol--Gel LiTaO3 films can crystallize well based on the three substrates above mentioned at 650℃. Tested on 5 kHz, the relative dielectric constant and loss LiTaO3 at 5kHz for LiTaO3 films on TiN substrate are about 57. 8, 0. 395 respectively.

关 键 词：铁电薄膜 钽酸锂 电极 SOL-GEL 

分 类 号：TB43[一般工业技术] TM304.9[电气工程—电机]