铜离子注入镧掺杂BaTiO_3半导体陶瓷的阻抗谱研究  

INVESTIGATION OF Cu-ION IMPIANTATION INTO La-DOPED SEMICONDUCTING BARIUM TITANATE BY IMPEDANCE MEASUREMENT

作　　者：王国梅[1,2] 徐晓虹[1,2] 吴建锋[1,2] 杜慧玲[1,2] 勾焕林[1,2] 

机构地区：[1]武汉工业大学材料科学与工程学院 [2]清华大学新型陶瓷与精细工艺国家重点实验室

出　　处：《中国陶瓷》1997年第5期8-11,32,共5页China Ceramics

基　　金：清华大学新型陶瓷与精细工艺国家重点实验室资助

摘　　要：本文应用宽频率范围的阻抗谱测量，分析了铜离子注入（１１０ＫｅＶ，６×１０１５和１×１０１７ｉｏｎｓ／ｃｍ２）镧掺杂ＢａＴｉＯ３半导瓷在不同温度时的晶粒电阻晶界电阻和电极与材料界面电阻。提出了相应的等效电路。研究结果表明，注入剂量为６×１０５ｉｏｎｓ／ｃｍ２时，可以提高材料的ＰＴＣＲ效应。此外，也应用阻温特性测量分析了铜离子注入样品的ＰＴＣＲ效应。La-doped semiconducting barium titanate was implanted with 110 KeV Cu-ions to doses of 6.0×10 15 and 1.0×10 17 ions/cm 2.Impedance measurement over a wide range of frequency was used to analyze the intragrain,inter-grain and the electrode interface resistances of the ceramics at different temperatures from 25℃ to 180℃.An appropriate\ equivalent circuit was proposed.The effect of dose on the implanted specimens was studied by this measurement.The results show that the PTCR effect can be increased in lower implantation.Additionally,the resistance vs temperature measurement was also used to investigate the PTCR effect of the implanted specimens.

关 键 词：钛酸钡 离子注入 阻抗谱 半导体陶瓷 掺杂 

分 类 号：TN304.82[电子电信—物理电子学]