Ge／Si(100)量子点生长与形态分布的研究  

Study on Growth and Morphology Properties of Ge/Si(100) Quantum Dots

作　　者：周志玉[1] 周志文[1] 李成[1] 陈松岩[1] 余金中[1] 赖虹凯[1] 

机构地区：[1]厦门大学物理系半导体光子学研究中心,福建厦门361005

出　　处：《半导体光电》2008年第2期220-225,共6页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(60336010,60676027);福建省工业科技重点项目(2006H0036);福建省自然科学基金项目(A0410008);国家“973”计划资助项目(2007CB613404)

摘　　要：利用超高真空化学气相淀积系统，通过控制淀积量、温度、流量等生长参数，在n型Si（100）衬底上自组装生长了一系列Ge量子点样品，用原子力显微镜进行了表征与分析。系统地研究了生长参数对Ge岛形态分布的影响并分析了有序、高密度Ge岛的生长机理。结果表明，从二维向三维岛跃迁后，最初形成的高宽比（高度与底宽的比值）在0．04～0.06之间的小岛是一种在低温下可以与圆顶岛共存的稳定岛，两种岛的分布随淀积参数的变化而变化。在高温下小岛几乎消失，流量的变化对小岛的密度影响较小。实验中获得小岛的密度最高为2．6×10^10cm^-2，圆顶岛的密度最高为4．2×10^9cm^-2。Ge quantum dots were grown on n-type Si（100） substrates through ultra-high vacuum chemical vapor deposition. The aim is to study t islands. The shape, the density, and the size of Ge is parameters such as growth temperature, Ge coverage, GeH Ge islands are obtained by atomic force microscopy. The formed at the early stages after growth mode transition fr ratio of height to base length between 0.04-0.06. They temperature while disappear at high temperature. The cha he growth mechanism of uniform Ge lands are dominated by the growth 4 flux. The morphology properties of results indicated that the Ge islands om can nge 2D to 3D are stable and have the coexist with dome islands at low of GeH4 flux the density of small-sized islands. The highest density of 2. 6 × 10^10 cm^-2 corresponding to small-sized islands and dome islands are obtained. has little impact on and 4. 2 × 10^9 cm^-2

关 键 词：GE量子点 超高真空化学气相淀积 S-K生长模式 

分 类 号：TN304.1[电子电信—物理电子学]