低磁控溅射率MCP防离子反馈膜工艺研究  

Preparation of ion-feedback barrier film on MCP

作　　者：朱宇峰[1] 张太民[1] 聂晶[1] 师宏立[1] 

机构地区：[1]西安应用光学研究所第二研究室微光夜视技术国防科技重点实验室,陕西西安710065

出　　处：《应用光学》2008年第3期360-363,共4页Journal of Applied Optics

摘　　要：为消除反馈正离子对三代微光夜视器件光阴极的有害轰击，提高微光像增强器的工作寿命，开展了低磁控溅射率法沉积微通道板（MCP）Al2O3防离子反馈膜的工艺研究。通过优化制备工艺，获得了制备MCP防离子反馈膜的最佳沉积条件：溅射电压1000V，溅射气压（4～5）×10^-2Pa，沉积速率0．5nm／min等。研究结果表明：在此工艺条件下，能够制备出均匀、致密且通孔满足质量要求的MCP防离子反馈膜。如果偏离这一最佳工艺条件，制备出的MCP防离子反馈膜膜层疏松、不连续，且通孔不能满足要求。To eliminate the bombardment of feedback ion to a photocarhode of a Gen. Ⅱ LLL night vision system and increase its operating lifetime,the preparation technique of depositing a Al2O3 ion-feedback barrier film on MCP was investigated by low-magnetron sputtering technique. The optimal depositon conditions for preparing the ion-feedback barrier film on MCP were obtained, such as operating voltage of 1 000 V, sputtering pressure of （4-5）×10^-2Pa and deposition rate of 0. 5 nm/min. The results show that the ion-feedback barrier film deposited under this optimal conditions can meet the uniformity, compactness and less pinhole requirements

关 键 词：磁控溅射 微通道板(MCP) 防离子反馈膜 

分 类 号：TN223[电子电信—物理电子学]