高功率808 nmInGaAsP-GaAs分别限制结构的半导体激光器  

High Power 808 nm InGaAsP/GaAs SCH Lasers

作　　者：朱宝仁[1] 张兴德[1] 薄报学 张宝顺 杨忠和 

机构地区：[1]长春光学精密机械学院高功率半导体激光国家重点实验室

出　　处：《光学学报》1997年第12期1614-1617,共4页Acta Optica Sinica

摘　　要：介绍了研究分别限制结构的（ＳＣＨ）ＩｎＧａＡｓＰ－ＧａＡｓ半导体激光器所得到的最新成果。利用引进的俄国技术，基于量子阱（ＱＷ）结构的ＩｎＧａＡｓＰ－ＧａＡｓ激光器，可用短时间液相外延（ＬＰＥ）技术制造。在（１００）ＧａＡｓ衬底上制成的ＩｎＧａＡｓＰ－ＧａＡｓ分别限制结构的激光器，主要参数如下：发射波长λ＝８０８ｎｍ，阈值电流密度Ｊ＝３００Ａ／ｃｍ２，对于条宽ｗ＝１００μｍ的激光器，连续功率为１～２Ｗ。对制成的激光器，进行连续１０００ｈ的实际寿命试验。This paper presents new results obtained recently in studies of separate confinement structure (SCH) InGaAsP/GaAs lasers. Using Russia′s technology, the InGaAsP/GaAs lasers based on QW structure can be produced by short time liquid phase epitary (STLPE) employing a modified sliding boat technique. The interface abruptness in the InGaAsP/GaAs lasers can be made comparable to the lattice constant. Using 〈100〉 GaAs substrates, InGaAsP/GaAs SCH SQW lasers were fabricated and the followig values of the main parameters were obtained: lasing wavelength λ=808 nm, threshold current density J th =300 A/cm 3, CW power high to 1￣2 W for the laser with stripe width W=100 μm. 1000 h lifetime tests have been performed and the factors which affect the lifetime of the lasers are discussed.

关 键 词：半导体激光器 高功率 分别限制结构 

分 类 号：TN248.4[电子电信—物理电子学]