Effect of Rapid Thermal Annealing Ambient on Gettering Efficiency and Surface Microstructure in 300mm CZ Silicon Wafers  

快速退火气氛对300mm CZ硅片吸杂效应和表面微观结构的影响(英文)

作　　者：冯泉林[1] 何自强[1] 常青[1] 周旗钢[1] 

机构地区：[1]北京有色金属研究院

出　　处：《Journal of Semiconductors》2008年第5期822-826,共5页半导体学报（英文版）

基　　金：国家高技术研究发展计划资助项目(批准号:2002AA3Z1110)~~

摘　　要：The effect of rapid thermal annealing （RTA） ambient on denuded zone and oxygen precipitates in Czochralski （CZ） silicon wafers is studied in this paper. N2 and a N2/NH3 mixture are used as RTA ambient. It is demonstrated that a high density of oxygen precipitates and thin denuded zone are obtained in N2/NH3 ambient,while a relatively lower density of oxygen precipitates and thicker denuded zone are observed in N2 ambient. As the RTA duration times increased, the oxygen precipitate density increased and the denuded zone depth decreased. X-ray photoelectron spectroscopy （XPS） data and atomic force microscope （AFM） results show that there RTA process,which can explain the different effect of RTA was a surface nitriding reaction during the N2/NH3 ambient ambient.研究了N2和N2/NH3混合气两种不同气氛快速退火处理硅片对洁净区和氧沉淀分布的影响.研究发现:N2/NH3混合气氛处理的硅片在后序热处理中表层形成很薄的洁净区同时体内形成高密度的氧沉淀;而N2气氛处理的硅片的洁净区较厚、氧沉淀密度较低.但是两种气氛下延长恒温时间都可以降低洁净区厚度,增加氧沉淀密度.X射线光电子能谱和原子力显微镜扫描的结果显示N2/NH3混合气氛处理使表面出现了强烈的氮化反应,利用氮化反应可以解释快速退火气氛对洁净区分布的影响.

关 键 词：300mm CZ silicon wafer denuded zone intrinsic gettering RTA XPS AFM 

分 类 号：TN304.12[电子电信—物理电子学]