在低基片温度下制备的 ITO 透明导电膜的性能  

Properties of ITO Transparent Conducting Film Deposited at Low Temperature

作　　者：李育峰[1] 程珊华[1] 宁兆元[1] 薛青[1] 金宗明[1] 马廷海[1] 

机构地区：[1]苏州大学物理系薄膜材料实验室

出　　处：《真空》1997年第6期10-13,共4页Vacuum

摘　　要：发展了使用直流辉光放电等离子体辅助反应蒸发法在低温玻璃基片上制备ＩＴＯ膜的工艺，研究了主要的工艺参数，如Ｓｎ／Ｉｎ配比，氧分压，基片温度等对于膜的透光率和电阻的效应。A range of indium tin oxide (ITO) film were deposited on glass substrates at low temperature using DC glow discharge plasma enchanced reactive evaporating. The effects of the primary depositing parameters, such as Sn/In ratio, oxygen pressure, substrate temperature, on the film transmission and resistance were investigated.

关 键 词：反应蒸发沉积 ITO膜 氧化铟锡 薄膜 

分 类 号：O614.432[理学—无机化学] O484[理学—化学]