氧离子束辅助激光淀积生长ZnO／Si的XPS探究  

XPS studies on ZnO/Si grown by O^+-assisted PLD

作　　者：李庚伟[1] 吴正龙[2] 邵素珍[3] 刘志凯[4] 

机构地区：[1]中国地质大学(北京)材料科学与工程学院,北京100083 [2]北京师范大学分析测试中心,北京100875 [3]北京市第四十七中学,北京100090 [4]中国科学院半导体材料科学实验室,北京100083

出　　处：《材料科学与工艺》2008年第2期255-258,263,共5页Materials Science and Technology

基　　金：国家高技术研究发展计划资助项目(7150010162);中国地质大学(北京)科技基金资助项目(200524)

摘　　要：为了探究ZnO/Si内部化学成分及有关信息,用氧离子束辅助(O+-assisted)脉冲激光淀积(PLD)法在不同实验条件下生长成ZnO/Si(111)样品.利用X射线光电子能谱(XPS)对长成的ZnO/Si异质结构进行了异位测试.通过对O1s峰及其肩状结构进行拟合、分析,得到了原子数密度比n(O)∶n(Zn),进而探究了原子数密度比与生长质量的关系.结果表明,用氧离子束辅助PLD法,可在较低的衬底温度190℃和适当O+束流条件下,生长出正化学比接近于1,且c轴单一取向最佳的ZnO/Si薄膜.用氧离子束辅助PLD淀积法生长ZnO薄膜,可以改善缺氧状况,能提供一个富氧环境.Several ZnO/Si （111） samples for the investigations were prepared by O^＋ -assisted pulsed laser deposition （PLD） under various conditions. The ex-situ tests of X-ray photoelectron spectroscopy （XPS） were carried out on the heterostructure ZnO/Si samples. All the Ols peaks were deconvoluted into two features by peak-fitting procedure, and the atom density ratios of n （O） to n （Zn） were calculated. Relation between the atom density ratio and growth quality was explored. The results show that stoichiometric ZnO （n（O）：n（Zn）= 1 ） thin films with single orientation along axle c could be prepared at the substrate temperature of 190℃ and proper flux of O^＋ ion beam by O^＋ -assisted PLD. This technique can provide an oxygen-enriched environ-ment for ZnO/Si preparation.

关 键 词：ZnO/N异质结构 氧离子束辅助PLD X射线光电子能谱(XPS) 

分 类 号：O484.1[理学—固体物理] TN248.1[理学—物理]