一种高电流增益的SiGe HBT的研制  

A SiGe HBT with High Current Gain

作　　者：赵安邦[1] 

机构地区：[1]江苏淮安信息职业技术学院,江苏淮安223003

出　　处：《中国集成电路》2008年第6期55-60,共6页China lntegrated Circuit

摘　　要：研制了一种平面集成多晶发射极SiGe HBT。经测量,在室温下电流增益β大于1500,最大达到2800,其Vceo为5V,厄利(Early)电压VA大于10V,βVA乘积达到15000以上。这种器件对多晶硅发射极砷杂质浓度分布十分敏感。A planar integration SiGe HBT with polysilicon emitter is fabricated, which has a current gain greater than 1500at room temperature and even up to 2800 at its maximum. Its Vcso is 5 V and Early voltage is greater than 10 V,

关 键 词：SIGE 异质结双极晶体管 平面集成 多晶硅发射极 

分 类 号：TN322.8[电子电信—物理电子学]