电离辐照Si-SiO_2的电子能谱深度剖析  

Depth-dissection of Si-SiO_2 irradiated with ~6Co by electron spectroscopy

作　　者：刘昶时[1] 吾勤之[1] 张玲珊[1] 

机构地区：[1]中国科学院新疆物理研究所

出　　处：《核技术》1990年第10期589-593,共5页Nuclear Techniques

基　　金：中国科学院青年奖励基金

摘　　要：应用灵敏的电子能谱分析技术,对经电离辐射辐照的Si-SiO_2结构进行深度剖析。实验结果表明:存在于Si-SiO_2中的界面区,在电离辐射的作用下向SiO_2表面方向展宽,界面中心向SiO_2表面方向移动。展宽与偏移的程度与辐照条件紧密相关。文中对实验结果以弱应力键断裂模型进行了分析。The Si-SiO2 irradiated with 60Co are analyzed by using the depth-dissection techniques of XPS and AES. The results show that there exists an interface and that when the sample is irradiated the interface extends towards the surface of SiO2 and the centre of the interface moves towards the surface of SiO2. The extension and movement are dependent on the condition of irradiation. An explanation for the experimental results is given using the Bond Strain Gradient Model.

关 键 词：SI-SIO2 XPS AES 电离 辐照 

分 类 号：TN304.12[电子电信—物理电子学]