铜离子注入(Ba_(1-x)Sr_x)TiO_3半导体陶瓷的交流阻抗特性  

AC IMPEDANCE CHARACTERISTICS OF Cu-ION IMPLANTED SEMICONDUCTING (Ba_(1-x)Sr_x)TiO_3

作　　者：王国梅[1] 徐晓虹[1] 吴建锋[1] 杜慧玲[1] 勾焕林[2] 

机构地区：[1]武汉工业大学材料学院,430070 [2]清华大学新型陶瓷与精细工艺国家重点实验室

出　　处：《陶瓷学报》1997年第2期78-85,共8页Journal of Ceramics

基　　金：清华大学新型陶瓷与精细工艺国家重点实验室资助

摘　　要：本文测量了铜离子注入（Ba(1－x)Srx）TiO3半导体陶瓷样品在25～180℃，10Hz～13MHz之间的交流阻抗。根据等效电路模型与阻抗谱的变化，分析了注入样品的晶粒电阻、晶界电阻及其对温度的依从位以及样品的PTCR特性。研究表明，注入剂量为6×1015ions／cm2时，可以提高材料的PTCR效应。此外，辅以XPS和阻温特性测量分析注入铜离子的状态及样品的PTCR特性。The complex impedance spectra of the Cu ion implanted semiconducting (Ba1.xSrx)TiO3 ceramics were measuredin the temperature range 25 ~ 18O℃ and frequence range 1O Hz~ 13MHz. According to the change of compleximpedance spectra and equivalent circuit model of the implanted spetimens, the resisance of bulk and grainboundary, and its temperature relations, and the PTCR characteristics were analyzed. The results show that thePTCR effect can be increased in does of 6 ×1O 15ions/cm2. Additionally, the X-ray photorement spectroscopy (XPS)and the resis tance- temperature measurement were also used to analyze the charge state of implanted Cu ions and theeffect of Cu-ion implantation on PTCR characteristics of the specimens.

关 键 词：离子注入 阻抗谱 半导体陶瓷 铜离子 氧化钛 

分 类 号：TM282.014[一般工业技术—材料科学与工程] TQ174.756[电气工程—电工理论与新技术]