传统光学光刻的极限及下一代光刻技术  

Ultimate Resolution of Conventional Optical Lithography and Next Generation Optical Lithography Technique

作　　者：蒋文波[1] 胡松[1] 

机构地区：[1]中国科学院光电技术研究所

出　　处：《微纳电子技术》2008年第6期361-365,369,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(60706005,60776029);863计划资助项目(2006AA03Z355)

摘　　要：分析了传统光学投影光刻分辨力的物理极限,介绍了国内外各大器件和设备厂商、科研单位等为了突破这个物理极限而做出的努力;从原理、发展状况及优缺点等几个方面对比分析了下一代光刻技术,最后对未来几十年的主流光刻技术作出了展望。极紫外光刻、浸没式光刻和纳米压印光刻将作为主流技术应用到超大规模集成电路的批量生产中,电子束光刻可以在要求极高分辨力时和这几个主流技术配合使用。其他下一代光刻技术由于工艺不成熟、不能批量生产等原因,在近期还不具备占领光刻设备市场主流的能力。Physical limiting of conventional optical projection lithography resolution is presented, many equipment manufacturers and scientific research departments all over the world making great efforts to improve the physical limiting are introduced. The next generation optical lithography techniques are compared and analyzed from principle, advantages and disadvantages, development status. At last, mainstream lithography techniques in the few decades are predicted. The extreme ultraviolet lithography, immersion lithography and nanoimprint lithography will be used in batch-production of the very large scale integrations （VLSI） as mainstream techniques. The electron-beam lithography can be cooperated with mainstream techniques with the high resolution required. Other next generation optical lithography techniques won＇t have the ability to occupy the main market of lithography equipments because of immature process and non-batch-production.

关 键 词：传统光学投影光刻 分辨力 物理极限 下一代光刻 主流技术 

分 类 号：TN305.7[电子电信—物理电子学]