共溅射法制备ITO：Zr薄膜及其特性研究  

Preparation and characteristics of ITO∶Zr thin films deposited by co-sputtering

作　　者：张波[1] 董显平[1] 徐晓峰[2] 赵培[3] 吴建生[1] 

机构地区：[1]上海交通大学材料科学与工程学院,教育部高温材料及测试重点实验室,上海200030 [2]东华大学理学院,上海200051 [3]中国科学院上海技术物理研究所,上海200083

出　　处：《光电子．激光》2008年第6期776-780,共5页Journal of Optoelectronics·Laser

基　　金：上海应用材料基金资助项目(0525)

摘　　要：采用ITO靶和Zr靶共溅射在玻璃衬底上沉积了ITO∶Zr薄膜,研究了衬底温度、氧流量对ITO∶Zr薄膜性能的影响。表征和对比了ITO∶Zr薄膜晶体结构和表面粗糙度的变化。ITO∶Zr薄膜在低温生长时就可以得到良好的光电性能,衬底温度的提高显著改善了薄膜的光电性能;一定范围的氧流量也可以改善薄膜的性能,但过量的氧却使得ITO∶Zr薄膜的光电性能变差。透射谱表明各参数的变化引起了明显的"Burstin-Moss"效应。当优化溅射条件为工作气压0.5Pa、氧流量0.3sccm、直流溅射功率45W(ITO靶)和射频功率10W(Zr靶)、沉积速率8nm/min和一定的衬底温度时,可以获得方阻10～20Ω/sq和可见光透过率85%(含基底)以上的ITO:Zr薄膜。ITO： Zr thin films are deposited on glass substrate by co-sputtering with ITO and Zr targets. The influences of parameters such as substrate temperature and oxygen flow rate on the properties of ITO ： Zr thin films are studied. The crystalline structure and surface roughness of ITO ; Zr thin films some measures. The better optieal-electronics characteristics of the thin films can be achieved at low substrate temperature and the increase of substrate temperature remarkably improves the optical-electronic characteristics of the thin films. The certain oxygen flow rates can change the properties of ITO ; Zr thin films,but excessive oxygen can worsen the optical-electronic characteristics. Obvious ＂Burstin-Moss＂ effect can be revealed by transmittance spectra with different parameters. The optimum parameters are as follows： sputtering pressure of 0. 5 Pa,oxygen flow rate of 0.3 sccm,sputtering DC power of 45 W （ITO taget） and RF power of 10 W （Zr taget） ,deposition rate of 8 nm/min and the certain substrate temperature. ITO ; Zr thin films with sheet resistance of 10-20 Ω/sq and optical transmittance of beyound 85% （including glass substrate） can be obtained.

关 键 词：ITO薄膜 磁控溅射 衬底温度 氧流量 

分 类 号：O484.4[理学—固体物理]