氨化温度对氨化Ga_2O_3/Al膜制备GaN纳米结构材料的影响  

Effect of different annealing temperature on the fabrication of GaN nanostructures by ammoniating the Ga_2O_3/Al films on Si substrates

作　　者：庄惠照[1] 胡丽君[1] 薛成山[1] 薛守斌[1] 

机构地区：[1]山东师范大学半导体研究所,山东济南250014

出　　处：《功能材料》2008年第2期331-333,共3页Journal of Functional Materials

基　　金：国家自然科学基金重大研究计划资助项目(9020102590301002)

摘　　要：采用磁控溅射的方法在Si(111)衬底上溅射沉积了Ga2O3/Al膜,并通过氨化的方法在Si(111)衬底上获得了GaN纳米结构材料,研究了不同的氨化温度对生成GaN纳米结构材料的影响。对样品进行了傅立叶红外吸收(FTIR)、X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)以及高分辨电镜(HR-TEM)测试,分析了不同温度对GaN样品的结构、组分和形貌等特性的影响。结果表明,用该方法在950℃的氨化温度下得到了大量的六方GaN纳米棒。Ga2O3/Al films were deposited on the Si（111） substrates by magnetron sputtering and we got many kinds of GaN nanostructures by annealing the Ga2O3/Al films at different temperature.Effects of different annealing temperature on fabrication of GaN nanostructures were studied.The as-grown GaN nanostructures are characterized by X-ray diffraction,fourier transform infrared spectroscopy,scanning electron microscopy,transmission electron microscopy and high resolution transmission electron microscopy.The results demonstrate that we got a lot of hexagonal wurtzite single crystal GaN nanorods at the annealing temperature of 950℃.

关 键 词：Ga2O3/Al膜 GAN纳米棒 氨化 磁控溅射 

分 类 号：TN304.2[电子电信—物理电子学] TB34[一般工业技术—材料科学与工程]