SRAM数据残留现象的机理分析  

The mechanism analysis of data remanence of SRAM

作　　者：焦慧芳[1] 张小波[1] 贾新章[1] 杨雪莹[2] 钟征宇[2] 

机构地区：[1]西安电子科技大学微电子学院,陕西西安710071 [2]信息产业部电子第五研究所,广东广州510610

出　　处：《电路与系统学报》2008年第3期40-43,共4页Journal of Circuits and Systems

摘　　要：通过实验进行了SRAM数据残留机理的研究,建立了数据残留时间与温度的关系。确定了低温下非平衡载流子复合率及扩散速度的降低,是导致SRAM断电后数据残留的主要原因。同时进行了SRAM电参数与数据残留的相关性分析,排除了实验条件下热载流子效应对数据残留特性的影响。The mechanism of data remancence of SRAM is studied by experiment, the relationship between data remanence time and temperature is built. The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature. As well as the relationship between the characteristic of data remanence and electronic parameters is analyzed. The effects of the hot-carrier on the data remanence of SRAM at the experiment condition is excluded.

关 键 词：SRAM 数据残留 低温 载流子复合 热载流子效应 

分 类 号：TN929.11[电子电信—通信与信息系统] TQ453.22[电子电信—信息与通信工程]