PLD法制备氧化锌薄膜生长机制及发光特性的研究  

Growth Mechanisms and Photoluminescent Properties of ZnO Thin Films Prepared by Pulsed Laser Deposition

作　　者：谢可可[1] 仇旭升[1] 孔明光[2] 刘炳龙[1] 汪壮兵[1] 于永强[1] 章伟[1] 梁齐[1] 

机构地区：[1]合肥工业大学理学院,合肥230009 [2]中国科学院合肥固体物理研究所材料物理重点实验室,合肥230031

出　　处：《材料导报（纳米与新材料专辑）》2008年第1期69-71,共3页

基　　金：教育部留学归国人员实验室建设项目(新型微电子薄膜研究室)

摘　　要：利用PLD法在Si衬底上成功地制备了具有较好C轴择优取向生长的ZnO薄膜,从样品的XRD谱可以看出在环境氧压为20Pa,衬底温度为700℃时生长的样品的XRD谱(002)峰半高宽较窄,膜的结晶程度最好。不同的衬底温度下膜的生长机制也不一样,主要有:V-L-S机制和V-S机制。样品室温下的PL谱显示所有样品均出现UV发射和可见光区蓝绿光发射,而蓝绿光发射强度随氧压的增大而增强,表明样品的蓝绿光发射来源于样品中的受主缺陷。C-axis oriented ZnO films are prepared on Si substrates by pulsed-laser deposition（PLD）. From the XRD patterns, it can be found that the films growing in the condition of Po2= 20Pa,Tsub = 700℃ has the relatively narrow FHWM, which means good crystallinity. The films growing at different substrate temperatures follow different growth mechanisms：the V-L-S mechanism and the V-S mechanism. The room temperature PL spectra of the samples show both the UV emission feature and a much broader emission band in the blue-green region, The blue-green emission becomes more intense as the substrate temperature gets higher. This means that the blue-green emission can be attribu- ted to the acceptor defect.

关 键 词：ZNO薄膜 PLD XRD PL谱 

分 类 号：O484.1[理学—固体物理]