Ge_xSi_(1-x)/Si超晶格衬底区中的弹性场  

An Elastic Strain Field in Substrate Body of Ge_xSi_(1-x)/Si Strained-Lager Superlattice

作　　者：栾国森[1] 胡坚 

机构地区：[1]武汉水利电力大学基础课部,宜昌443002

出　　处：《武汉水利电力大学（宜昌）学报》1997年第3期81-86,共6页

摘　　要：针对应变层超晶格界面处晶格畸变的特征，提出用位错网络模型模拟界面处的畸变，根据弹性理论，应用Volterra点方法，导出了界面畸变在社底区（Si）中，所引起的弹性场。In is Well known, the lattice distortion will occur at the interface of superlattice because of the lattice mismatch. A dislocation network model for simulating the strain mode at the interface is suggested. According to elastic theory, the expressions of the elastic displacement and strain field induced by the dislocation networks are deducede by using a volterra point force method.

关 键 词：应变层超晶格 锗 硅 能带结构 弹性场 超晶格 

分 类 号：O471.5[理学—半导体物理]