宽束冷阴极离子源离子能量及能量分布的研究  

Ion Energy and Energy Distribution of the Broad Beam Cool Cathode Ion Source

作　　者：徐均琪[1] 弥谦[1] 杭凌侠[1] 严一心[1] 董网妮[1] 

机构地区：[1]西安工业大学陕西省薄膜技术与光学检测重点实验室,西安710032

出　　处：《光电工程》2008年第6期23-27,53,共6页Opto-Electronic Engineering

基　　金：教育部重点科技项目(101-050502);陕西省教育厅专项科研计划项目(05JK222);陕西省薄膜技术与光学检测重点实验室基金项目(ZSKJ200401)

摘　　要：介绍了一种用于离子束辅助沉积光学薄膜的新型宽束冷阴极离子源，详细叙述了该源的结构和工作过程。采用五栅网离子能量测试装置研究了离子源的离子能量及能量分布。结果表明，探针接收的离子最低能量随着引出电压和真空度的升高而升高。离子能量分布概率密度函数为单峰函数，其峰值位置随着真空度的降低向低能量方向移动，随着引出电压的升高向高能量方向移动。当引出电压为200～1200V时，离子平均能量为600-1600eV，呈线性规律变化。这种离子源的离子平均初始动能约为430-480eV。了解和掌握离子源的这些特性和参数，可以有效的对镀膜过程的微观环境（离子密度、离子能量等）进行控制，促进薄膜制备工艺更好地进行。A novel type broad beam cool cathode ion source was successfully developed for optical thin film growth technique by ion beam assisted deposition. The structure, discharge process and working properties were introduced in this paper. The ion energy and its distribution were investigated by a 5-grid tester. The results indicates that the lowest ion energy in beam increases with the increase of the extraction voltage, whereas decreases with the increase of the pressure. The peak position of the ion energy distribution function shit＇cs to the low energy with the increase of the pressure, whereas to the high energy with the increase of the extraction voltage. The average ion energy is about 600~1 600 eV at the extraction voltage of 200-1 200 V, and the initial ion energy is 430-480 eV. The ion energy and energy distribution can be controlled effectively by regulating the working parameters of the ion source during the film deposition process.

关 键 词：离子能量 能量分布 离子源 离子束辅助沉积(IBAD) 薄膜 

分 类 号：O484[理学—固体物理]