检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:李阳[1] 孟志国[1] 吴春亚[1] 王文[2] 郭海成[2] 张芳[3] 熊绍珍[1]
机构地区:[1]南开大学光电子所天津市光电子薄膜器件与技术重点实验室,天津300071 [2]香港科技大学电机与电子工程系,中国香港 [3]科技部高技术研究发展中心,北京100044
出 处:《固体电子学研究与进展》2008年第2期241-244,275,共5页Research & Progress of SSE
基 金:国家高技术研究发展计划“863”平板显示专项(批准号:2004AA303570);国家自然科学基金重点基金(批准号:60437030)支持
摘 要:通过对溶液法金属诱导晶化多晶硅薄膜制备工艺的优化,制备出性能良好的P型掺杂多晶硅薄膜。厚度为50nm的MICP+-Poly-Si薄膜的方块电阻可降低至400Ω左右,其光学特性表现为在红光区域具有比较高的反射率和很小的吸收率,因此用它替代ITO用作红光OLED的阳极材料。由于此薄膜对可见光比较高的反射率和阴极铝对可见光的高反射性,使之形成了一定Q值的微腔效应。结果显示该器件的最大流明效率为5.88cd/A,比用ITO作阳极制备的OLED提高了57%。进一步优化器件结构,调整发光层在腔中的最佳位置,可以大大增强发光强度,从而可以实现发光强度高、单色性好的红色微腔有机电致发光显示器件。The high performance of Boron-doped solution-based metal induced crystallized poly-Si thin film has been obtained by optimizing its preparation process flow. The sheet resistance of the MIC P^+-Poly-Si thin film with the thickness of 50 nm has been reduced to about 400 Ω; meanwhile, it has the relatively high reflectivity and very low absorptivity in red light region. Accordingly, it was used as the electrode of OLED to substitute ITO. The P^+-Poly-Si anode with relatively high reflectivity and the Al cathode with very high reflectivity could form a micro-cavity structure. This micro-cavity structure has a certain Q value so that it could improve the efficiency of the OLED fabricated on it. The maximum luminance efficiency of the device with the poly-Si anode is 5.88 cd/A, higher than that of the OLED with the ITO anode by 57%. By further optimizing the device structure and the best location of the emitting layer, the EL intensity could largely increase and the FWHM (Full Width Half Maximum) of the emitting spectrum could decrease. Consequently, the Red Microcavity Organic Light Emitting Device with high performance could be achieved.
分 类 号:TN383[电子电信—物理电子学]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.222