二维氢负离子  

Two Dimensional Hydrogen Anion

作　　者：王怀玉[1] 孙金祚[1] 

机构地区：[1]烟台大学薄膜器件与弱信号信息技术实验室

出　　处：《烟台大学学报（自然科学与工程版）》1997年第4期245-249,共5页Journal of Yantai University(Natural Science and Engineering Edition)

基　　金：山东省自然科学基金

摘　　要：在半导体掺杂材料或超晶格材料中存在着带负电的杂质，在高浓度掺杂时应考虑杂质之间的相互作用，对δ层掺杂则需要计算二维杂质模型，所有这些都必须研究二维氢负离子．本文采取了合适的步骤，计算了二维氢负离子的能量，与三维氢负离子作了比较，分析了各变分参量的数值差别及其物理意义．There exist impurity anions in doped semiconductors. The interactions between impurities have to be researched when the materials are doped with high concentraiton. For doped δ layer materials,the twodimensional atomic model should be considered. Combining all these aspects, we think a twodimensional hydrogen anion is necessary to study. In this paper,an appropriate procedure is applied to calculate the energy of a twodimensional hydroger anion. The results are compared with that of three dimensional hydrogen anion. The variations of parameters and their physical meanings are analyzed.

关 键 词：氢负离子 杂质态 波函数 能级 半导体 掺杂 

分 类 号：O474[理学—半导体物理]