有机碱对铜CMP材料去除率作用的实验研究  

Experimental Study of the Influences of Organic Alkali on Material Removal Rate of Cu CMP

作　　者：李庆忠[1] 于秀坤 苏建修[2] 郭东明[3] 

机构地区：[1]江南大学,无锡214122 [2]河南科技学院,新乡450003 [3]大连理工大学精密与特种加工教育部重点实验室,大连116024

出　　处：《机械科学与技术》2008年第6期812-814,818,共4页Mechanical Science and Technology for Aerospace Engineering

基　　金：国家自然科学重大基金项目(50390061);中国博士后科学基金项目(20060390984)资助

摘　　要：分别使用几种有机碱作为络合剂、SiO2水溶胶为磨料、H2O2为氧化剂,复配后分别进行相同工艺参数的抛光试验。试验结果表明:乙二胺强络合作用明显,对铜的去除率最大可以达到850.8 nm/min,表面粗糙度Ra=13.540°A;二羟基乙基乙二胺和二乙醇胺去除率较低,本试验中最大分别为71.8 nm/min和25.1 nm/min。乙二胺适合用于碱性环境下的ULSI铜抛光液,材料去除率较高的原因是有效的强络合作用与抛光参数相匹配以及化学作用和机械作用动态平衡的结果。In this paper, an experimental study is presented, in which 3 kinds of organic alkalis are used as the complexing agent, a silica sol is used as the abrasive and H2O2 is used as the oxidizer respectively. After mixing them orderly, a series of polishing experiments are conducted with the same process parameters. The results of experiments indicate that the complexation effect of the organic alkali containing 2 amidogen is very obvious, with the maximal removal rate for copper reaching 850. 8 nm/min and the roughness of surface Ra = 13. 540 A; the removal rates of other two kinds of organic alkalis is much lower relatively, with the maximal removal rate being only 71.8 nm/min and 25. 1 nm/min respectively in the experiment. It can be concluded that the organic alkali containing 2 amidogen is suitable for ULSI copper polishing slurry under alkaline condition. The reason for higher material removal rate is that the effective complexation action can match the polishing process parameters, and that there exists good dynamic balance between the chemical action and the mechanical action.

关 键 词：CMP 有机碱 铜 材料去除率 

分 类 号：TN305.2[电子电信—物理电子学]