超晶格量子阱的沟道效应与光学双稳态效应  

Effects of Channeling Effect and Optic Bistable State on Superlattice Quantum Well

作　　者：张梅[1] 罗诗裕[1] 邵明珠[1] 

机构地区：[1]东莞理工学院,广东东莞523106

出　　处：《半导体光电》2008年第3期353-356,共4页Semiconductor Optoelectronics

摘　　要：构造了一种高阶非线性"抛物线"量子阱,并提出了一种获得光学双稳态的新概念。指出了只需在超晶格量子阱的两端加上一个直流电场和交变电场,便可用它作为光学双稳态器件。引入高阶非线性"抛物线"势,并考虑到粒子运动阻尼和外场作用,在经典力学框架内和弱偏置下,粒子运动方程化为了具有硬弹簧特性的Duffing方程。用摄动法找到了系统的近似解,并分析了共振线附近粒子的运动行为与系统的稳定性。结果表明,粒子的振幅平方与外场振幅平方的关系曲线出现了后弯现象,正是这个后弯现象决定了系统存在双稳态,也正是这个双稳态决定了具有四阶非线性抛物线势阱的超晶格量子阱可望作为光子或光电子技术中新的记忆元件或存储元件。The parabola potential well with the 4-order nonlinearity was constituted. A new ideal on the optic bistable state is proposed. It is indicated that the superlattice quantum well applied the constant field and the alternating field on its both sides might be made as the memory or the storage cell in the photo or photo-electric technology. The introducing parabola potential with the 4-order nonlinearity, and considering the motion damping of a particle and applied electric field , the particle motion equation is reduced to the Dulling equation with a hard-spring properties in the classical mechanics frame. The approximation solution is found by perturbation method, the dynamic stabilities are analysed. It showed that the back bend phenomenon exits in a^2- f^2curve,then bistable state exits in the systym. The new memory or storage cell might be made by using the bistable state in the photo or photo-electric technology.

关 键 词：量子阱 抛物线势 超晶格 摆方程 

分 类 号：O471.5[理学—半导体物理]