消除CCD不良背景的工艺研究  

Study on Eliminating CCD's Harmful Background

作　　者：李平[1] 郑杏平[1] 李仁豪[1] 雷仁方[1] 许宏[1] 韩恒利[1] 陈捷[1] 张故万[1] 汪琳[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2008年第3期387-389,共3页Semiconductor Optoelectronics

摘　　要：对电荷耦合器件(CCD)交流成像中存在的背景发白、亮条、亮点、拖影和固定图像噪声等不良背景进行了分析,并提出了调整栅介质生长方法、本征吸杂、低温退火等消除不良背景的具体工艺方法,获得了高质量的CCD器件。测试结果表明,其交流成像中的不良背景得到了有效控制。Analyzed were the harmful backgrounds, such as whitening, bright fringle, bright spot, deferred tails and fixed image noise, existing in CCD （Charge Coupled Device） AC imaging test. The method of modulating the gate dielectric growth, the intrinsic gettering technique and low temperature annealing technique were applied to eliminate harmful backgrounds. The test results indicate that the harmful backgrounds were well controlled and high-quality CCDs were obtained.

关 键 词：电荷耦合器件 不良背景 栅介质 本征吸杂 低温退火 

分 类 号：TN386.5[电子电信—物理电子学]