退火对ZnO薄膜光学特性的影响  

Effect of Annealing on Optical Properties of ZnO Thin Films

作　　者：张锡健[1] 王国强 王卿璞[1] 龚小燕[1] 吴小惠[1] 马洪磊[1] 

机构地区：[1]山东大学物理学院,山东济南250100

出　　处：《发光学报》2008年第3期451-454,共4页Chinese Journal of Luminescence

基　　金：国家基础科学人才培养基金(J0730318);山东省自然科学基金(Y2005917)资助项目

摘　　要：用射频磁控溅射法在蓝宝石衬底上制备出ZnO薄膜,通过X射线衍射(XRD)、扫描电镜(SEM)和光致发光(PL)谱等研究了退火温度对ZnO薄膜结构和光学性质的影响。测量结果显示,所制备的ZnO薄膜为六角纤锌矿结构,具有沿c轴的择优取向;随着退火温度的升高,(002)XRD峰强度和平均晶粒尺寸增大,(002)XRD峰半高宽(FWHM)减小,光致发光紫外峰强度增强。结果证明,用射频磁控溅射法通过适当控制退火温度可得到高质量ZnO薄膜。ZnO films have been prepared by radio frequency magnetron sputtering on sapphire substrates. The effect of the annealing temperature on the structure and optical properties of the ZnO films are studied using XRD, SEM and photoluminescence. The results indicate that the ZnO thin films have hexagonal wurtzite single phase structure and a preferred orientation with the c axis perpendicular to the substrates. With increasing annealing temperature the intensities of the XRD （002） diffraction peaks increases, the grain size and intensity of the UV photoluminescence peaks increase while the FWHM of （002） peaks decreases, which demonstrates that the high quality of the ZnO films deposited by RF magnetron sputtering can be obtained by properly controlling annealing temperature

关 键 词：ZNO薄膜 射频磁控溅射 退火 

分 类 号：O482.31[理学—固体物理] TN304.2[理学—物理]