NdFeB永磁靶材溅射模拟  

Sputtering simulation of NdFeB permanent magnet target

作　　者：雒哲廷[1] 张敏刚[1] 伍静[1] 罗春云[1] 

机构地区：[1]太原科技大学材料科学与工程学院,山西太原030024

出　　处：《电子元件与材料》2008年第6期61-64,共4页Electronic Components And Materials

基　　金：山西省自然科学基金资助项目(No.20021067)

摘　　要：运用SRIM2006软件对Nd2Fe14B靶溅射过程进行了模拟，并就入射离子的入射能量和角度进行了分析，得到溅射产额与入射离子能量、入射角度以及溅射靶材的一般规律：1）溅射产额随着入射离子能量的增加而增加，在低能量区域增加很快，到了高能量区域增加变缓；2）溅射产额随着入射离子入射角度的增大逐渐增大，且在70°～80°出现极大值，如当入射离子的入射角度为75°，入射离子能量为7keV时，溅射产额可达4，398（原子·离子^-1）；3）溅射原子的摩尔比与靶材原子摩尔比存在一定偏差，导致薄膜成分与靶材成分不一致。The sputtering process for targets of Nd2Fe14B was simulated using SRIM2006 software. Incidence energy and angle of the incidence ion were analyzed. The general rules for sputtering yield, incidence ion energy, angle and sputtering !arget materials were obtained as the follows： 1） the sputtering yield increases with rise of incidence ion energy, it is increased rapidly in low energy region and is gradually increased in high energy region; 2） the sputtering yield gradually increases with increase of incidence angle of incidence ion and its greatest value is at 70°～80° when incidence angle of incidence ion is 75°, incidentce ion energy is 7 keV, the sputtering yield reaches 4.398 （atom · ion^-l）; 3） the thin film composition is different to target due to the deviation of mole ratio between sputtering atom and target atom.

关 键 词：电子技术 Nd2Fe14B永磁靶 溅射 模拟 

分 类 号：O484[理学—固体物理]