氧分压对HfO2薄膜残余应力的影响及有限元分析  

Influence of oxygen partial pressure on HfO_2 residual stresses and its finite element analysis

作　　者：张丽莎[1] 许鸿[1] 

机构地区：[1]中国科学院光电技术研究所

出　　处：《强激光与粒子束》2008年第6期894-898,共5页High Power Laser and Particle Beams

基　　金：国家高技术发展计划项目

摘　　要：利用电子束蒸发法制备了单层HfO2膜,控制氧气流量从0 mL/min以步长5 mL/min递增至25 mL/min(标况下)。利用ZYGO干涉仪测量基片镀膜前后的面形变化,代入Stoney公式计算出残余应力,分析了不同氧压下残余应力的变化情况。随着氧压的增大,残余应力由张应力逐渐过渡到压应力,当氧压过大时,压应力减小。因此可以通过改变氧压来控制应力。应力的变化与薄膜的微观结构密切相关,分析了所有样品的X射线衍射图(XRD),发现均为非晶结构。利用Ansys建立基片-薄膜有限元模型,将应力作用下基片的形变与实验结果进行对比,验证所建立的模型,为分析HfO2/SiO2膜堆应力的匹配设计提供参考。HfO2 films were prepared by electron beam evaporation on K9 glass. Oxygen flux was varied in the range of 0 mL/min to 25 mL/min by step of 5 mL/min （under standard condition）. The residual stress was measured by viewing the substrate deflection using ZYGO interferometer. The results show that, as the oxygen pressure increases, the residual stresses decrease gradually from tensile to compressive, and then increase. The changes may be due to the variation of the microstructure of the HfO2 films, which was inspected with X-ray diffraction（XRD）. The finite element software ansys was used to calculate the substrate deflection which was then compared with the measured data. The comparison proves that our model is right and it helps to conduct analyses on HfO2/SiO2 stack stresses.

关 键 词：电子束蒸发 HFO2薄膜 残余应力 氧分压 有限元分析 

分 类 号：O484.4[理学—固体物理]