GaAs基InAs量子点中类氢杂质的束缚能  

Binding energy of hydrogen-like impurity in InAs/GaAs quantum dot

作　　者：郑文礼[1] 李志文[1] 李树深[2] 王雪峰[2] 

机构地区：[1]承德民族师范高等专科学校物理系,河北承德067000 [2]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083

出　　处：《大学物理》2008年第6期26-30,共5页College Physics

基　　金：国家自然科学基金资助项目(60521001)

摘　　要：在有效质量近似下,采用微扰法研究了InAs/GaAs量子点内类氢杂质基态及低激发态的束缚能.受限势采用抛物形势,在二维平面极坐标下,精确地求解了电子的薛定谔方程.数值计算结果表明,类氢杂质基态及低激发态的束缚能敏感地依赖于抛物形势的角频率,受类氢杂质的影响,谱线发生蓝移.这一结果对设计和制备量子点器件是有价值的.The binding energies of the ground state and the low-lying excited states of hydrogen-like impurity in a InAs/GaAs quantum dot are investigated by applying the effective mass approximation and the perturbation. In the two-dimensional polar coordinate, the electron Schrodinger equation is solved exactly in a parabolic confinement potential. The numerical results show that the binding energies of the ground state and the low - lying excited states of hydrogen-like impurity sensitively depend on the frequency of the parabolic confinement potential and the spectrum is shifted forward to the blue because of hydrogen-like impurites. These results are useful for designing and fabricating the QD devices.

关 键 词：有效质量 束缚能 微扰法 量子点 

分 类 号：O471.1[理学—半导体物理]