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机构地区:[1]兰州物理研究所
出 处:《真空与低温》1997年第3期145-149,共5页Vacuum and Cryogenics
摘 要:首次利用渐进因子分析法研究了Ta2O5/Ta样品的俄歇深度剖析过程,获得了样品中Ta的三种不同化学态Ta、Ta2O5和TaOx,并发现Ta2O5薄膜中经Ar+离子束轰击后产生的亚稳态产物TaOx的x值为1.6,含量接近40%。Ta2O5薄膜在深度剖析中未分解出游离态的Ta成分。In this paper,It is firstly used of evolving factor analysis(EFA) into analyzing AES depth profiles of Ta 2O 5/Ta sample.It found three different chemical states of tantalum which were Ta,Ta 2O 5and TaO x, and discovered that,the film would decompose and produce unstable TaO x component when Ta 2O 5 film was being sputtered by Ar + ion. x value was 1.6 and atomic concentration was about to 40%,but no tantalum emerged in Ta 2O 5 during profiling.
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