利用重离子束开展半导体器件单粒子效应的探讨  

STUDY OF SINGLE EVENT EFFECTS(SEE) INDUCED BY HEAVY ION IRRADIATION OF SEMICONDUCTOR DEVICES

作　　者：刘杰[1] 侯明东[1] 马峰[1] 程松 

机构地区：[1]中国科学院近代物理研究所

出　　处：《原子能科学技术》1997年第3期278-283,共6页Atomic Energy Science and Technology

摘　　要：讨论了利用重离子研究宇航半导体器件单粒子效应（ＳＥＥ）时应重视的几个问题，即空间辐射环境中的重离子，粒子辐射对半导体器件的影响和利用重离子束进行ＳＥＥ测试，以及重离子和质子在器件单粒子效应研究中的关系，最后介绍单粒子翻转重离子显微学。In the paper several problems are discussed,which should be paid attention to in the study of SEE induced by heavy ion irradiation of semiconductor devices,i.e.heavy ion in the natural space environment,influences of semiconductor devices irradiated by particles and measurement of single event upset,relationship of SEE of devices induced by heavy ion and proton,respectively.Finally,heavy ion microscopy of single event upsets is simply introduced.

关 键 词：重离子 单粒子效应 半导体器件 航天 空间辐射 

分 类 号：V520.6[航空宇航科学与技术—人机与环境工程] V443