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作 者:杨慧光[1] 朱世富[1] 赵北君[1] 赵欣[1] 何知宇[1] 陈宝军[1] 孙永强[1]
出 处:《人工晶体学报》2008年第3期557-560,共4页Journal of Synthetic Crystals
基 金:国家自然科学基金(No.50672061)
摘 要:ZnGeP2多晶的合成是其单晶生长的前提和基础,多晶材料的质量是生长高质量单晶的关键。因此,要获得高质量的ZnGeP2单晶体,必须提供高质量的ZnGeP2多晶材料。对两温区气相输运机械振荡法合成ZnGeP2多晶材料的工艺进行了研究,利用高纯(6N)P、Ge、Zn单质为原料,采用两温区气相输运和机械振荡合成出了ZnGeP2多晶材料。合成出的多晶材料经比重测试和X射线粉末衍射测试证明与标准值一致。采用改进的布里奇曼法生长出外观完整、无裂纹的15mm×25mm单晶体,在2.5~10μm范围内红外透过率达50%以上。ZnGeP2 polycrystalline synthesis is the basis of ZnGeP2 single crystal growth.The quality of polycrystalline material is key factor of the success in single crystal growth.Therefore,it is very necessary to inquire into the synthesis methods and conditions of high-quality ZnGeP2 polycrystalline materials in order to grow high-quality ZnGeP2 single crystals.In this paper,synthesis of ZnGeP2 polycrystalline materials using the vapor-transporting with two-zone temperature and mechanical oscillation was studied.This method is based on the direct combination of P,Ge,Zn elements.The density and X-ray powder diffraction of the obtained compound were determined.The ZnGeP2 crystal with dimension of 15 mm×25mm can be obtained by modified Bridgman method from the melt of synthesized polycrystalline material.And its transmittance in the infrared range of 2.5-10 μm is over 50%.
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