湿法腐蚀工艺研究碳化硅晶体缺陷表面形貌  

Defect Characterization of SiC by Wet Etching Process

作　　者：杨莺[1] 陈治明[1] 

机构地区：[1]西安理工大学电子工程系,西安710048

出　　处：《人工晶体学报》2008年第3期634-638,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.60576044);教育部高校博士学科点专项科研基金(No.20040700001);国家博士后科学基金(No.200704111137)资助项目

摘　　要：采用湿法腐蚀工艺,对PVT法生长的碳化硅单晶缺陷进行了研究。利用熔融态KOH和K2CO3作为腐蚀剂,通过分别改变腐蚀剂配比、腐蚀时间、腐蚀温度的方法,获得了良好的湿法腐蚀工艺参数。用CCD光学显微镜和SEM观察腐蚀以后的晶体表面形貌。结果表明,最佳腐蚀工艺参数为K2CO3∶KOH=5g∶200g,440℃/30min。腐蚀以后(0001)Si表面可以清晰地观察到微管、基面位错、螺位错和刃位错。实验还发现晶片表面抛光质量会影响腐蚀后SiC表面的形貌。Wet etching process was used to investigate the defects of SiC grown in PVT method.The optimized wet etching process parameters were obtained.The molten mixtures of KOH and K2CO3 in different ratios were used as the etchants.The SiC samples were etched at different temperature for different time.The morphology of the etched samples was observed in SEM and optical microscope with a CCD camera.The result show that the optimized wet etching process parameters are K2CO3∶KOH =5 g∶200 g,440 ℃/30 min.Micropipes,basal plane dislocations,screw dislocations and edge dislocations are very clear on（0001）Si face of SiC etched by the optimized process.The experiments also find that the polishing quality can affect the morphology of etched SiC.

关 键 词：碳化硅 缺陷 腐蚀 

分 类 号：TN304[电子电信—物理电子学]