Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD  

MOCVD生长的GaN薄膜中缺陷团引起的X射线漫散射研究(英文)

作　　者：马志芳[1] 王玉田[1] 江德生[1] 赵德刚[1] 张书明[1] 朱建军[1] 刘宗顺[1] 孙宝娟[2] 段瑞飞[2] 杨辉[1] 梁骏吾[1] 

机构地区：[1]中国科学院半导体研究所集成光电子国家重点实验室,北京100083 [2]中国科学院半导体所半导体照明研发中心,北京100083

出　　处：《Journal of Semiconductors》2008年第7期1242-1245,共4页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60506001,60476021,60576003);国家重点基础研究发展规划(批准号:2007CB936700)资助项目~~

摘　　要：High-resolution X-ray diffraction has been employed to investigate the diffuse scattering in a （0001） oriented GaN epitaxial film grown on sapphire substrate. The analysis reveals that defect clusters are present in GaN films and their concentration increases as the density of threading dislocations increases. Meanwhile, the mean radius of these defect clus- ters shows a reverse tendency. This result is explained by the effect of clusters preferentially forming around dislocations, which act as effective sinks for the segregation of point defects. The electric mobility is found to decrease as the cluster concentration increases.采用高分辨X射线衍射对在蓝宝石(0001)面生长的GaN外延膜的漫散射进行了研究.结果表明,GaN薄膜中存在缺陷团,其浓度随着穿透位错密度的增加而增加,其平均半径呈相反趋势.基于位错是点缺陷的聚集区,缺陷团优先在位错附近形成的效应对结果进行了解释.同时发现电子迁移率随缺陷团浓度的增加而减少.

关 键 词：X-ray diffuse scattering GAN defect cluster 

分 类 号：TN304[电子电信—物理电子学]