8W AlGaN/GaN HEMT功率器件的研制  

An 8W X Band AlGaN/GaN Power HEMT

作　　者：刘果果[1] 郑英奎[1] 魏珂[1] 李诚瞻[1] 刘新宇[1] 和致经[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2008年第7期1354-1356,共3页半导体学报（英文版）

基　　金：国家重点基础研究发展计划(批准号:2002CB311903);中国科学院重点创新(批准号:KGCX2-SW-107)资助项目~~

摘　　要：报道了基于国产衬底以及国产外延的AlGaN/GaN HEMTX波段功率器件的研究进展.利用国产衬底以及外延材料,优化了器件栅场板的结构,研制成功栅长0.35μm,栅宽为1mm的微波功率器件.该器件输出电流密度达到0.83A/mm,击穿电压大于100V,跨导为236mS/mm,截止频率(fT)达到30GHz,最大振荡频率(fmax)为32GHz,8GHz下在片进行连续波测试,漏端电压为40V时测试得到功率增益4.9dB,输出功率达8W,功率附加效率(PAE)为45%.AlGaN/GaN HEMTs at the X band based on homemade SiC substrates and homemade epi-layers are first reported. A 0.35μm gate length, lmm gate width microwave power device is produced with a gate-connected field plate. The power device exhibits a maximum drain current density as high as 0.83A/mm and a peak extrinsic transconductance of 236mS/mm. A unity current gain cutoff frequency（fτ） of 30GHz and a power gain cutoff frequency of 31GHz are obtained. The device biased at a drain voltage of 40V demonstrates a continuous wave saturated output power of 8W with a gain of 4.9dB and a power-added efficiency of 45% at 8GHz.

关 键 词：氮化镓 高电子迁移率晶体管 微波功率 栅场板 

分 类 号：TN386[电子电信—物理电子学]