中频磁控溅射制备GaN薄膜  

GaN films deposited on Si(111) by intermediate-frequency magnetron sputtering

作　　者：丁咚[1] 阴明利[1] 邹长伟[1] 郭立平[1] 付德君[1] 

机构地区：[1]武汉大学物理学院加速器实验室,武汉430072

出　　处：《核技术》2008年第7期515-518,共4页Nuclear Techniques

摘　　要：采用中频磁控溅射技术,以金属Ga为靶材料,在Si(111)衬底上形成了GaN薄膜,研究了溅射压强、衬底温度等对GaN薄膜结构和成分的影响。发现沉积气压为0.4～1.0Pa时,薄膜呈GaN(002)取向,气压大于1.0Pa和小于0.4Pa时,用X射线衍射方法难以观察到GaN(002)的衍射峰。X射线能谱分析表明在最佳实验条件下制备的GaN薄膜的元素比Ga:N为1:1。GaN films were grown by intermediate-frequency magnetron sputtering of pure Ga metal target on Si（111） substrate. The properties and the contents of GaN films were analyzed by X-ray diffraction （XRD） and energy-dispersive X-ray spectroscopy （EDS）, respectively. The relationships between the total gas pressure, the substrate position and temperature, and crystallization quality and element contents of the GaN films, were investigated. The results showed that preferred orientation of GaN （002） was achieved at total gas pressures of 0.4-1.0 Pa. Little diffraction of GaN （002） could be observed either at pressures below 0.4 Pa or above 1.0 Pa. The Ga：N ratio was 1：1 for films prepared under the optimized conditions.

关 键 词：中频磁控溅射 GAN X射线衍射 沉积速率 

分 类 号：O484.1[理学—固体物理] O47[理学—物理]