分子束外延具有GaAs/AlGaAs超晶格缓冲层的量子阱材料  

Quantum Well Material with Superlattice Buffer Layer Grown by Molecular Beam Epitaxy

作　　者：宋珂[1] 张福厚[1] 邢建平[1] 曾一平[2] 

机构地区：[1]山东工业大学电子工程系 [2]中国科学院半导体研究所

出　　处：《科技通报》1997年第6期369-372,共4页Bulletin of Science and Technology

基　　金：山东省科委资助

摘　　要：采用分子束外延技术（ＭＢＥ）生长了具有ＧａＡｓ／ＡｌＧａＡｓ超晶格缓冲层的单量子阱和多量子阱材料．采用ＧａＡｓ／ＡｌＧａＡｓ超晶格缓冲层掩埋衬底缺陷，获得的量子阱结构材料被成功地用于制作量子阱激光器．波长为７７８ｎｍ的激光器，最低阈值电流为３０ｍＡ，室温下线性光功率大于２０ｍＷ．A study of single and multiple quantum well material with GaAs/AlGaAs superlattice buffer layer grown on GaAs by MBE was performed. We use GaAs/AlGaAs superlattice buffer layer in the structure to bury the defects of the substrate. The quantum well material obtained was used to made into quantum well lasers. In the room temperature,the lowest threshold current for 778nm lasers is 30mA, the liner output power is greater than 20mW.

关 键 词：分子束外延 缓冲层 量子阱 超晶格 半导体激光器 

分 类 号：TN304.2[电子电信—物理电子学]