p型ZnO薄膜制备和掺杂的研究进展  

Research Progress on Deposition and Doping Techniques of p-Type ZnO Thin Films

作　　者：单晶[1] 谭天亚[1] 崔春阳[1] 江雪[1] 陈俊杰[1] 

机构地区：[1]辽宁大学物理学院,沈阳市光电子功能器件与检测技术重点实验室,辽宁沈阳110036

出　　处：《激光与光电子学进展》2008年第8期40-45,共6页Laser & Optoelectronics Progress

摘　　要：ZnO作为第三代半导体功能材料,一直受到国内外的广泛关注。高质量的p型掺杂是基于光电器件应用的关键。综述了获得p型ZnO薄膜的制备方法和掺杂技术的研究进展,讨论了目前生长高质量的p型ZnO薄膜存在的困难,并对不同方法制备的p型ZnO薄膜的特点进行了比较分析。ZnO is the third generation semiconductor functional material, and has attracted much attention at home and abroad. High quality p-type doping is the key to develop optoelectronic devices. The progress of deposition and doping techniques for p-type ZnO thin films was summarized, and the difficulty of growing high quality p-type ZnO thin films was discussed. The characteristics of p-type ZnO thin films fabricated by different methods were compared.

关 键 词：光学材料 ZNO薄膜 制备方法 P型掺杂 P-N结 

分 类 号：O484.4[理学—固体物理]