星用功率MOSFET器件总剂量效应试验研究  

Study of Total Ionization Dose Test of Power MOSFET for Satellite Applications

作　　者：薛玉雄[1] 曹洲[1] 郭祖佑[1] 杨世宇[1] 田恺[1] 

机构地区：[1]兰州物理研究所真空低温技术与物理国防科技重点实验室,兰州730000

出　　处：《核电子学与探测技术》2008年第3期538-542,共5页Nuclear Electronics & Detection Technology

摘　　要：本文针对星用功率MOSFET器件JANTXV 2N7261和SR7262V,进行了钴-60γ射线辐照试验研究。在γ射线辐照过程中,采用JT?1型晶体管特性图示仪和计算机控制的摄像机,实时监测器件电参数随辐照剂量变化的特征,通过试验研究获得了被试器件阈值电压、漏电流和击穿电压随总剂量变化的特征照片和曲线,得出被试器件的抗总剂量水平。Two kinds of power MOSFETs, JANTXV 2N7261 and SR7262V, are tested under cobalt 60 γ-irradiation. During the course of γ-irradiation, the electric parameter signal characteristic are observed using JT-1 transistors＇ characteristics displaying instrument and a camera controlled by computer lively. The device threshold voltage, breakdown voltage and leakage current characteristic picture and curve vs. irradiation dose were obtained. The dose level was found, for tested device.

关 键 词：辐射效应 功率MOSFET器件 总剂量效应 Γ射线 

分 类 号：TN4[电子电信—微电子学与固体电子学]