红外InGaAs/InP单光子探测器的温度特性研究  

Temperature Characteristic for InGaAs/InP Single-photon Detector at Infrared Communication Wavelengths

作　　者：李水峰[1] 熊予莹[2] 王晗[1] 曾思明[1] 廖常俊[3] 

机构地区：[1]广东工业大学实验教学部,广东广州510006 [2]华南师范大学物理与电信工程学院,广东广州510006 [3]华南师范大学信息光电子科技学院,广东广州510006

出　　处：《量子光学学报》2008年第3期327-332,共6页Journal of Quantum Optics

摘　　要：分析了SAGM-APD单光子探测器暗电流产生的机理;得出工作温度和偏置电压是影响SAGMInGaAs/InP单光子探测器探测性能的重要因素。通过实验,分析了三种APD在不同温度下暗电流、光电流与偏置电压的关系曲线,得出一些结论。The mechanism of dark current in InGaAs/InP single photon detection is analyzed to show the performance affected by operation temperature and biased voltage. characteristics measured at different temperature in three avalanche photodiode operated in Geiger mode for of InGaAs/InP avalanche photodiode that is largely Photo current-Voltage and Dark current-Voltage single photon detectors are studied and valuable conclusions are reached.

关 键 词：量子光学 单光子探测器 雪崩光电二极管 光电流 暗电流 

分 类 号：O431[机械工程—光学工程]