六方氮化铝纳米线本征缺陷和氧杂质的光致发光谱研究(英文)  

Photoluminescence of Hexagonal AlN Nanowires with Native Defect and Oxygen Impurity

作　　者：吕惠民[1] 陈光德[2] 耶红刚[2] 颜国君[1] 谷力[1] 郭金仓[1] 孙帅涛[1] 

机构地区：[1]西安理工大学应用物理系,西安710048 [2]西安交通大学应用物理系,西安710049

出　　处：《光子学报》2008年第8期1599-1602,共4页Acta Photonica Sinica

基　　金：the National Natural Science Foundation of China(10474078)

摘　　要：利用AlCl3和NaN3直接反应合成出六方结构氮化铝纳米线.变温光致发光谱显示,在可见光范围内有两个半高宽大约为5nm的尖锐辐射峰,中心波长分别位于413nm和422nm处.同时,在近紫外区还有一个较宽的辐射带,随着温度升高,该辐射峰发生了明显的红移现象,其中心波长随温度线性变化.理论和实验分析表明,413nm辐射与AlN本身性质无关,而422nm辐射峰是与A1有关的两种本征缺陷所致.The hexagonal AlN nanowires are synthesized through the direct reaction of AlCl3 with NaNa. The photoluminescence spectra at different temperatures show that the product has two relatively narrow emission peaks with a full width at half maximum of about 5 nm centered at 413 nm and 422 nm respectively, as well as an emissive band in the near ultraviolet area. As the temperature rises, the emission band has an obviously red shift, which is proportional to temperature. Theoretical and experimental analyses show that the emission peak at 413 nm does not relate to the native elements of AlN, and the peak at 422 nm is caused by Al related native defects.

关 键 词：AlN纳米线 光致发光谱 本征缺陷 氧杂质 

分 类 号：TN304[电子电信—物理电子学]