离子束辅助沉积铂碳混合膜及其抑制栅电子发射性能  

Electron emission suppression characteristics of Pt-C thin film deposited by ion beam assisted deposition

作　　者：江炳尧[1] 冯涛[2] 王曦[1] 柳襄怀[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [2]纳光电集成与先进装备教育部工程研究中心华东师范大学,上海200062

出　　处：《功能材料与器件学报》2008年第4期757-762,共6页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助项目(No.10505027)

摘　　要：采用离子束辅助沉积技术,在硅、钼衬底上分别制备铂碳混合膜。XRD的分析结果表明,当铂碳混合膜中铂的组份较多时,有较强的铂(111)面衍射峰和较弱的铂(200)面衍射峰,铂的组份呈(111)择优取向。Raman谱的分析结果表明,碳基本上呈非晶状态。模拟二极管的实验表明,在纯钼阳极上镀覆铂碳混合膜,其抑制热电子发射的性能明显优于纯钼阳极。Platinum （Pt） and Carbon （C） was coated on the substrate of silicon and molybdenum by ion beam assisted deposition （IBAD）. The structure of the as - deposited Pt - C film was studied by XRD and Raman spectroscopy. The XRD results show that Pt exhibits mixed strong （ 111 ） and weak （200） orientations. The Raman spectrum show that the carbon exists in the form of amorphous. The electron emission suppression characteristics of Pt - C thin film were measured using analogous diode method. The results show that electron - emission from Mo anode coated with Pt - C film is much less than that from the Mo anode without Pt- C film.

关 键 词：离子束辅助沉积 铂碳混合膜 栅电子发射 

分 类 号：TN124[电子电信—物理电子学]