ESD应力下的扩散电阻及模型击穿特性  

Punch-through Characteristics of Diffused Resistor and Its Model Under ESD Stress

作　　者：路香香[1] 罗宏伟[2] 姚若河[1] 林志成[3] 

机构地区：[1]华南理工大学物理科学与技术学院,广州510640 [2]电子元器件可靠性物理及其应用技术国家级重点实验室,广州510610 [3]华南师范大学物理与电信工程学院,广州510006

出　　处：《微电子学》2008年第4期469-472,共4页Microelectronics

基　　金：电子元器件可靠性物理及其应用技术国家级重点实验室基金资助项目(5130804108)

摘　　要：随着集成电路的尺寸越来越小,其对静电放电(ESD)也变得越来越敏感,而电阻在ESD保护电路中可以起到隔离和分压的作用。对ESD应力下扩散电阻的四个区域:线性区、饱和区、雪崩倍增和负微分电阻区、二次击穿区的模型进行了分析。通过TLP实验对大电流作用下的电阻特性进行验证研究,试验分析了扩散电阻的ESD保护特性;着重讨论了二次击穿区,即热击穿区,的电阻特性,得出电阻的热击穿最先发生在阳极n+-n结,继续加大电压会使阳极-阴极间完全热烧毁的结论。Diffused resistor model under ESD stress in linear, saturation, multiplication and snapback, and secondary breakdown regions was analyzed. Resistor characteristics under large current were studied through TLP experiment. ESD protection characteristics of the diffused resistor were discussed, with emphasis on resistor characteristics of secondary breakdown region or thermal breakdown region. It was concluded that thermal breakdown would occur at n^＋-n junction, which could be burnout by increasing supply voltage.

关 键 词：ESD应力 扩散电阻 TLP测试 二次击穿 

分 类 号：TN406[电子电信—微电子学与固体电子学]