等离子体处理对GaN发光二极管性能影响  

Influence of Plasma Treatment on Performances of the GaN-based Light-emitting Diodes

作　　者：达小丽[1] 沈光地[1] 刘建平[1] 牛南辉[1] 朱彦旭[1] 梁庭[1] 邹德恕[1] 郭霞[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院光电子技术实验室,北京100022

出　　处：《北京工业大学学报》2008年第7期682-687,共6页Journal of Beijing University of Technology

基　　金：国家重点基础研究发展计划资助项目(2006CB604902);北京市人才强教计划资助项目(05002015200504)

摘　　要：为了研究等离子体处理对ICP刻蚀损伤的恢复效果,将多个样品放置于不同温度的等离子体增强化学气相沉积样品台上,通过改变射频源功率,分别使用N_2、N_2O和NH_3等离子体对GaN发光二极管进行处理.研究结果表明,在100℃、20W的射频功率条件下,用N_2O等离子体处理GaN发光二极管可以极大地改善器件的光电特性;用N_2等离子体处理GaN发光二极管可以使器件的光电特性得到微弱改善;但是使用NH_3等离子体处理GaN发光二极管,会使其光电特性明显恶化.The authors investigated the effects of plasma treatment on ICP etch damage. The GaN-based LED was put in PECVD chamber at different temperature and treated by N2, N2O and NH3 plasma under different RF power. It is observed that, in the case of 100℃ and 20 W RF power, the optical and electrical characteristics of GaN-LEDs were improved after the N2O plasma treatment, the optical and electrical characteristics of GaN-LEDs were improved slightly after the N2 plasma treatment, while that of the GaN- LEDs were significantly degraded after the NH3 plasma treatment.

关 键 词：光电子 半导体材料 发光二极管 

分 类 号：TN304.2[电子电信—物理电子学]