A Ka Broadband High Gain Monolithic LNA with a Noise Figure of 2dB  

2dB噪声系数的Ka波段宽带高增益单片低噪声放大器(英文)

作　　者：黄清华[1] 刘训春[1] 郝明丽[1] 张宗楠[1] 杨浩[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2008年第8期1457-1460,共4页半导体学报（英文版）

摘　　要：A four-stage monolithic microwave integrated circuits （MMIC） low noise amplifier （LNA） operating from 23 to 36GHz is reported using commercially available 0.15μm PHEMT technology. The LNA is self-biased. To achieve a low noise characteristic, careful optimizations of gate width are performed to reduce gate resistance. Absorption circuits and an elaborate bias structure with a resistor-capacitor network are employed to improve stability. Multiple resonance points and negative feedback technologies are used to widen the bandwidth. Measurements show a noise figure （NF） of less than 2.0dB,and the lowest NF is only 1.6dB at a frequency of 31GHz. In the whole operation band,the LNA has a gain of higher than 26dB,and an input return loss and output return loss of more than 11 and 13dB,respectively. The output power at ldB compression gain of 36GHz is about 14dBm. The chip area is 2.4mm ×1mm.报道了一种基于商用0.15μm赝配高电子迁移率晶体管工艺的单片低噪声放大器,工作频率范围为23~36GHz.它采用自偏置结构.对晶体管栅宽进行了优化设计减小栅极电阻,以得到低的噪声系数.采用吸收回路和加电阻电容网络的直流偏置结构提高电路稳定性,用多谐振点方法和负反馈技术扩展带宽.测试结果表明,其噪声系数低于2.0dB,在31GHz处,噪声系数仅为1.6dB.在整个工作频带范围内,增益大于26dB,输入回波损耗大于11dB,输出回波损耗大于13dB.36GHz处的1dB压缩点输出功率为14dBm.芯片尺寸为2.4mm×1mm.

关 键 词：MMIC LNA Ka broadband NF high gain 

分 类 号：TN722.3[电子电信—电路与系统]