基于侧壁压阻式的位移传感器研制及应用  

Development of a Displacement Sensor with a Sidewall Piezoresistor and Its Typical Application

作　　者：孙立宁[1] 王家畴[1] 荣伟彬[1] 李欣昕[2] 

机构地区：[1]哈尔滨工业大学先进机器人与系统国家重点实验室,哈尔滨150001 [2]中国科学院上海微系统与信息技术研究所传感技术国家重点联合实验室,上海200050

出　　处：《Journal of Semiconductors》2008年第8期1589-1594,共6页半导体学报（英文版）

基　　金：国家杰出青年基金(批准号:50725518);国家高技术研究发展计划(批准号:2007AA04Z315);长江学者和创新团队发展计划资助项目~~

摘　　要：为了提高面内运动位移检测的灵敏度和改善侧壁压阻工艺与其他工艺间的兼容性问题,研究了一种可用于面内运动位移检测的传感器,提出了利用离子注入工艺和深度反应离子刻蚀(DRIE)工艺相结合制作检测梁侧壁压阻的方法.侧壁压阻式位移传感器的灵敏度比在检测梁表面制作压阻的传统位移传感器高近一倍.同时把位移传感器集成到基于体硅工艺的纳米级定位平台上,实验测试表明,这种位移传感器加工技术可以很容易地与其他工艺相兼容,位移传感器的灵敏度优于0.903mV/μm,线形度优于0.814%,分辨率优于12.3nm.For improving displacement sensor sensitivity to detect the motion in-plane and to improve the vertical sidewall surface, a new displacement sensor used for detecting motion in-plane is proposed. Piezoresistor technology is compatible with the other mi- cromachining technology. This sensor can be integrated with other devices easily and fabricated with ion implantation technology combined with deep reactive ion etching technology. This design doubles the sensitivity compared with the conventional design be- cause it puts the piezoresistor on the surface of the vertical sidewall of the detection beam. Besides using vertical sidewall piezoresistor technology,this displacement sensor has been applied to a micro xy-stage to detect the stage motion successfully. The experimental results verify that the sensitivity of the fabricated displacement sensors is better than 0. 903mV/t^m, the linearity is better than 0. 814% ,and the displacement resolution is better than 12.3nm.

关 键 词：微机电系统 侧壁压阻 定位平台 反应离子刻蚀 位移传感器 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]