SOI NMOSFET单粒子效应的3-D模拟  

Study of the Single-Event Effect of SOI NMOSFET by 3-D Simulation

作　　者：赵发展[1] 郭天雷[1] 海潮和[1] 彭菲 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]亚舍立半导体技术公司,北京100176

出　　处：《核电子学与探测技术》2008年第1期159-162,205,共5页Nuclear Electronics & Detection Technology

摘　　要：随着SOI器件尺寸不断缩小,单粒子效应敏感区域相对有源区比例增加,对于其敏感区域的机理研究显得越来越重要。本文利用软件对SOI MOSFET的敏感区域进行了3-D空间模拟,阐述了敏感区域的机理:截止NMOSFET的反偏漏结迫使单粒子轰击产生的电子空穴对分离,漏极迅速收集电子产生瞬时电流,空穴向体区漂移并在体区堆积,使体电势升高导致寄生三极管开启产生较长时间的放大电流。良好的体接触能够快速抽走堆积的空穴,抑制体电位的升高,降低漏极收集电流。As the scaling down of the device, the ratio of sensitive area to single-event effect is increasing compared to active area. It＇s important to study the mechanism of the sensitive area of device structure. This paper uses 3-D TCAD software to simulate SOI NMOSFET, analyze the sensitive area. And conelude that the reverse bias drain junction compel the electronic-bole pairs to separate, the electronics are collected immediately by drain and a very shot time drain current is generated. The holes are drift and accumulate in body area to force the electrostatic potential to increase, then the parasitic npn transistor is on, a relative long time drain current is established. Therefore effective body contact can extract the holes accumulated in the body area, suppress the electrostatic potential to increase, decrease the drain current.

关 键 词：单粒子效应 SOI SRAM 加固 

分 类 号：TN4[电子电信—微电子学与固体电子学]