基于OES的等离子体刻蚀过程  

Plasma etching process based on OES

作　　者：王巍[1] 王玉青[1] 孙江宏[2] 兰中文[3] 龚云贵[1] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065 [2]北京信息科技大学机电工程学院,北京100192 [3]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《红外与激光工程》2008年第4期748-751,共4页Infrared and Laser Engineering

基　　金：国家自然科学基金重点资助项目(60236010);重庆邮电大学校基金资助项目(A2006-01)

摘　　要：光学发射光谱(OES)诊断技术是高密度等离子体刻蚀工艺过程的关键技术,OES信号作为一种实时信号可以用来预测刻蚀过程的进展程度和判断刻蚀性能的好坏。在自行研发的等离子体刻蚀机平台上,采用美国海洋公司的OES传感器系统,采集多晶硅刻蚀工艺中所产生的OES信号,利用主元素分析法(PCA)对OES数据进行压缩处理,提高了实时信号的快速处理能力。对实验数据的分析表明:波长为405nm的OES谱线可以明确显示出等离子体刻蚀进程,是一条表征等离子体刻蚀过程的状态检测及终点检测控制的特征谱线。在此基础之上,提出了基于PCA法的终点检测算法,用以判断刻蚀终点。Optical emission spectroscopy （OES） diagnostics is a key technique for high density plasma etching. OES can be used as a real-time sensor to predict the etching progress and qualify the etching performance in an integrated circuit manufacturing line. With the ICP high density plasma etching reactors with Ocean optical emission spectroscopy systems,the OES data was collected from the polysilicon etching process. The OES data was compressed greatly with the principle component analysis （PCA） method,which improved the capability of real time processing of OES signal.The analysis of OES data shows that the etching process is displayed obviously with the 405 nm OES curve,which is a characteristic wavelength for state diagnostic and endpoint detection of poly etching in high density plasma. Moreover,endpoint detection algorithm based on PCA is proposed to judge the endpoint of plasma etching.

关 键 词：等离子体刻蚀 OES 终点检测 PCA 

分 类 号：TN365[电子电信—物理电子学]